 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| S T M8358S S amHop Microelectronics C orp. Oct.28, 2005 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 7.2A R DS (ON) ( m W ) Max ID -5.2A R DS (ON) ( m W ) Max 25 @ V G S = 10V 36 @ V G S = 4.5V D1 8 48 @ V G S = -10V 72 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed a S ymbol VDS VGS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD TJ, TS TG N-C hannel P-C hannel 30 20 7.2 6.1 29 1.7 2 1.44 -55 to 150 -30 20 -5.2 -4.4 -20 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8358S N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 7A VGS =4.5V, ID= 5A VDS = 5V, VGS = 4.5V VDS = 5V, ID = 7A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.8 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 3.0 V 17 22 20 18 810 170 110 VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 7 A VGS = 10V R GE N = 3 ohm VDS =15V, ID =7A,VGS =10V VDS =15V, ID =7A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID = 7 A VGS =10V 2 25 m ohm 36 m ohm A S 950 PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =15V, VGS = 0V f =1.0MHZ 2.2 12 18 22 12 18.5 9.2 2.2 4.6 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8358S P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID = -5A VGS =-4.5V, ID= -4A VDS = -5V, VGS = -10V VDS = -5V, ID= -5A Min Typ C Max Unit -30 -1 V uA 100 nA -1 -1.7 40 60 20 9 700 175 115 3 10 18 48 32 13.8 7.2 1.3 4.5 833 -3.0 48 72 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =-15V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = -15V R L = 3 ohm VGS = -10V R GE N = 3 ohm VDS =-15V, ID =-5A,VGS =-10V VDS =-15V, ID =-5A,VGS =-4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =-15V, ID = -5 A VGS =-10V 3 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8358S ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.79 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. N-Channel 30 V G S =4.5V 25 V G S =4V 20 25 25 C ID, Drain C urrent(A) 20 15 V G S =10V ID, Drain C urrent (A) -55 C 15 10 5 0 V G S =3V 10 T j=125 C 5 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 2.0 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 50 1.8 1.6 1.4 1.2 1.0 0.0 R DS (on) (m W) V G S =4.5V 40 30 20 10 0 V G S =10V V G S =10V ID=7A V G S =4.5V ID=5A 1 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 S T M8358S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.40 ID=250uA 1.30 1.20 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 50 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=7A Is , S ource-drain current (A) 40 10.0 R DS (on) (m W) 125 C 30 75 C 20 25 C 10 0 75 C 25 C 125 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M8358S 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =15V ID=7A 1000 C , C apacitance (pF ) 800 600 400 200 C rs s 0 0 5 10 15 C os s C is s 6 20 25 30 0 3 6 9 12 15 18 21 24 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance 300 200 S witching T ime (ns ) Tr 40 10 (O DS N) L im it 100 60 T D(off) ID, Drain C urrent (A) R 10 1s 10m s T D(on) Tf 0m s 10 11 DC 1 1 V DS =15V ,ID=7A V G S =10V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 V DS , Drain-S ource V oltage (V ) 6 10 60 100 300 600 R g, G ate R es is tance (W) F igure 11.s witching characteris tics 10 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve F igure 13. Normalized T hermal T rans ient Impedance C urve 6 S T M8358S P-C hannel 30 V G S =-10V 20 V G S =-4.5V -55 C -ID, Drain C urrent(A) 25 20 15 10 16 V G S =-4V -ID, Drain C urrent (A) 12 8 T j=125 C 4 25 C 0 0 0.8 1.6 2.4 3.2 4.0 4.8 V G S =-3V 5 0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 120 2.0 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 100 1.8 1.6 1.4 1.2 1.0 0.0 V G S =-10V ID=-5A R DS (on) (m W) 80 V G S =-4.5V 60 40 20 0 V G S =-4.5V ID=-4A V G S =-10V 1 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) -ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 S T M8358S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 120 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=-5A -Is , S ource-drain current (A) 100 10.0 R DS (on) (m W) 80 60 40 20 0 75 C 25 C 125 C 25 C 125 C 75 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 -V G S , G ate- S ource Voltage (V ) -V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T M8358S -V G S , G ate to S ource V oltage (V ) 1200 1000 10 8 6 4 2 0 VDS =-15V ID=-5A C , C apacitance (pF ) 800 600 400 C os s 200 C rs s 0 0 5 10 15 C is s 6 20 25 30 0 2 4 6 8 10 12 14 16 -V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance 50 -ID, Drain C urrent (A) Tr 300 200 S witching T ime (ns ) 10 R (O DS 100 60 10 N) L im it 10 10 1s DC ms 0m s T D(off) Tf T D(on) 11 0.1 0.03 1 1 V DS =-15V ,ID=-5A V G S =-10V VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 50 6 10 60 100 300 600 R g, G ate R es is tance (W) -V DS , B ody Diode F orward V oltage (V ) F igure 11.s witching characteris tics 10 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve F igure 13. Normalized T hermal T rans ient Impedance C urve 9 S T M8358S PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M8358S SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 11 |
Price & Availability of STM8358S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |